SI1016CX-T1-GE3
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SI1016CX-T1-GE3 datasheet
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МаркировкаSI1016CX-T1-GE3
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ПроизводительSiliconix
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ОписаниеSiliconix SI1016CX-T1-GE3 Product Category: MOSFET RoHS: yes Transistor Polarity: N and P-Channel Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 8 V Continuous Drain Current: 0.6 A, 0.18 A Resistance Drain-Source RDS (on): 0.396 Ohms, 0.756 Ohms Configuration: Dual Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SC-89-6 (SOT563-6) Fall Time: 11 ns Forward Transconductance gFS (Max / Min): 2 S, 1 S Gate Charge Qg: 0.75 nC, 1 nC Minimum Operating Temperature: - 55 C Power Dissipation: 0.22 W Rise Time: 16 ns Series: SI1016CX Tradename: TrenchFET Typical Turn-Off Delay Time: 26 ns
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Количество страниц12 шт.
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Форматы файлаHTML, PDF
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